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SVT09N04SA is an N-channel enhancement mode power MOS field effect transistor which is produced using Trench Mos   technology. 

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are widely used in UPS, DC-DC converters.


Main feature
  • 8.5A, 40V, RDS(on)(typ.)=15.5mW@VGS=10V

  • Low gate charge

  • Low Crss

  • Fast switching

  • Improved dv/dt capability

Documents
title Types of Size (KB) date Download the latest English version
SVT09N04SA 0 2020-04-11 SVT09N04SA Datasheet_1.2