SVT09N04SA is an N-channel enhancement mode power MOS field effect transistor which is produced using Trench Mos technology.
The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in UPS, DC-DC converters.
8.5A, 40V, RDS(on)(typ.)=15.5mW@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
| title | Types of | Size (KB) | date | Download the latest English version |
|---|---|---|---|---|
| SVT09N04SA | 0 | 2020-04-11 | SVT09N04SA Datasheet_1.2 |