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The SVT033R5NAT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS   technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.


Main feature
  • 180A, 30V, RDS(on)(typ.)=2.8mW@VGS=10V

  • Low gate charge

  • Low Crss

  • Fast switching

  • Improved dv/dt capability

Documents
title Types of Size (KB) date Download the latest English version
SVT033R5NAT 0 2020-04-11 SVT033R5NAT Datasheet_1.0
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