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SVT044R5NT/D/L5 an N-channel enhancement mode power MOS field effect transistor which is produced using SILAN LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is widely used in UPS, Power Management for Inverter Systems.


Main feature
  • 178A, 40V

  • Low gate charge

  • Low Crss

  • Fast switching

  • Improved dv/dt capability


Documents
title Types of Size (KB) date Download the latest English version
SVT044R5NT/D/L5 0 2020-04-11 SVT044R5NT(D)(L5) Datasheet_1.4