The SVT085R5NYT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.
This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.
120A, 85V, RDS(on)(typ.)=4.5mW@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
| title | Types of | Size (KB) | date | Download the latest English version |
|---|---|---|---|---|
| SVT085R5NYT | 0 | 2020-04-11 | SVT085R5NYT Datasheet_1.0 |