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SVT087R2NT is an N-channel enhancement mode power MOS field effect transistor which is produced using advanced LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is widely used in UPS, Power Management for Inverter Systems.


Main feature
  • 96A, 80V, RDS(on)(typ.)=6.2mW@VGS=10V

  • Low gate charge

  • Low Crss

  • Fast switching

  • Improved dv/dt capability

Documents
title Types of Size (KB) date Download the latest English version
SVT087R2NT 0 2020-04-11 SVT087R2NT Datasheet_1.0
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