SVT107R5NT an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.
This device is widely used in UPS, Power Management for Inverter Systems .
140A, 100V, RDS(on)(typ.)=6mW@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
| title | Types of | Size (KB) | date | Download the latest English version |
|---|---|---|---|---|
| SVT107R5NT | 0 | 2020-04-11 | SVT107R5NT Datasheet_1.1 |