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SVT1040SA is an N-channel enhancement mode power MOS field effect transistor which is produced using Trench Mos   technology. The improved trench stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. 

These devices are widely used in UPS, DC-DC converters.


Main feature
  • 10A, 40V, RDS(on)(typ.)=15mW@VGS=10V

  • Low gate charge

  • Low Crss

  • Fast switching

  • Improved dv/dt capability


Documents
title Types of Size (KB) date Download the latest English version
SVT1040SA 0 2020-04-11 SVT1040SA Datasheet_1.1