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The SVT1104SA is an N-channel enhancement mode power MOS field effect transistor which is produced using Trench Mos   technology. The improved process and cell structure  have been especially tailored to minimize on-state resistance, provide superior switching performance. 

This device is widely used in UPS, DC-DC converters, synchronous rectifier and switch.


Main feature
  • 4A, 40V, RDS(on)(typ.)=36mW@VGS=10V

  • Low gate charge

  • Fast switching

  • Improved dv/dt capability


Documents
title Types of Size (KB) date Download the latest English version
SVT1104SA 0 2020-04-11 SVT1104SA Datasheet_1.1