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SVT03100ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. 

This device is widely used in UPS, Power Management for Inverter Systems.


Main feature
  • 60A, 30V, RDS(on)(typ.)=8.5mW@VGS=10V

  • Low gate charge

  • Low Crss

  • Fast switching

  • Improved dv/dt capability


Documents
title Types of Size (KB) date Download the latest English version
SVT03100ND 0 2020-04-11 SVT03100ND Datasheet_1.1
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