SVT10111ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode.
This device is widely used in UPS, Power Management for Inverter Systems
14A,100V, RDS(on)(typ.)=85mW@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
| title | Types of | Size (KB) | date | Download the latest English version |
|---|---|---|---|---|
| SVT10111ND | 0 | 2020-04-11 | SVT10111ND Datasheet_1.3 |