SVF1N60BM/MJ/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM hih-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
0.5A,600V,RDS(on)(typ.)=11W@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
| title | Types of | Size (KB) | date | Download the latest English version |
|---|---|---|---|---|
| SVF1N60BM(MJ)(D) | 0 | 2020-04-13 | SVF1N60BM/MJ/D _Datasheet |