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3GT620060PFYL
INSULATED GATE BIPOLAR TRANSISTOR

3GT620060PFYL is Insulated Gate Bipolar Transistor fabricated in Silan  planar  IGBT technology

Field Stop technique is used in this chip, with low VCEsat and switch loss

The top electrodes material is Al, and the backside electrodes material  is Al,Ti,Ni and Ag

Design for UPS, MPS&PFC