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3GT645120TFYL
Insulated Gate Bipolar Transistor

3GT645120TFYL is Insulated Gate Bipolar Transistor fabricated in Silan trench IGBT technology.  

Field Stop technique is used in this chip, with low VCEsat and switch loss.

The top electrodes material is Al, and the backside electrodes material  is Al,Ti,Ni and Ag.

Design for inverter,UPS, welding