3VD128500YH is a 500V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology;
Advanced termination scheme to provide enhanced voltage-blocking capability;
Avalanche Energy Specified;
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;
The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.