3VD129600RYH is a 600V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology;
Advanced termination scheme to provide enhanced voltage-blocking capability;
Avalanche Energy Specified;
The typical equivalent specification is 1A/600V;
The packaged products are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.