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3VD129600RYH
HIGH VOLTAGE MOSFET CHIPS

3VD129600RYH is a 600V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology;

Advanced termination scheme to provide enhanced voltage-blocking capability;

Avalanche Energy Specified;

The typical equivalent specification is 1A/600V;

The packaged products are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.