3VD142600RYH is a 600V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology;
Advanced termination scheme to provide enhanced voltage-blocking capability;
Avalanche Energy Specified;
The chip can be packaged in TO-251 type and the typical equivalent product is 1N60;
The packaged product is widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.