3VD238700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology.
Advanced termination scheme to provide enhanced voltage-blocking capability.
Avalanche Energy Specified.
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
The chips may packaged in TO-251 type and the typical equivalent product is 2N70.
The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.