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3VD238700YL
HIGH VOLTAGE MOSFET CHIPS

3VD238700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology.

Advanced termination scheme to provide enhanced voltage-blocking capability.

Avalanche Energy Specified.

Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.

The chips may packaged in TO-251 type and the typical equivalent product is 2N70.

The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.