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3VD311200YH
N-CHANNEL POWER MOSFET

3VD311200YH is an N-channel enhancement mode power MOS field effect transistor which is produced using silicon epitaxial process.

With high energy pulse in the avalanche and com-mutation mode;

Superior switching performance;

The chip can be packaged to TO-220. The specification of typical finished product is SVD640;

These devices are widely used in power supplies, power inverters, etc.