3VD391900YH is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology.
Advanced termination scheme to provide enhanced voltage-blocking capability.
Avalanche Energy Specified.
This chip can be packaged in TO-220 type and the typical equivalent product is 6N90.
The packaged products are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.