3VD434650YH is a 650V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology;
Advanced termination scheme to provide enhanced voltage-blocking capability;
Avalanche Energy Specified;
The typical equivalent product is 12N65;
The packaged products are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.