3VD041030NEJL-6 is a N-Channel enhancement mode MOS-FET chip fabricated in advanced silicon epitaxial planar technology.
Zener diode ESD protected up to 500V(HBM)
High density cell design for low RDS(ON)
Rugged and reliable.
Fast switching performance.
High saturation current capability.
The chips may be packaged in SOT-23 type and the typical equivalent product is 3018.
The packaged product is widely used in the small servo motor control, power MOS-FET gate drivers, and other switching applications.