3VD199700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology.
Advanced termination scheme to provide enhanced voltage-blocking capability.
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
The chips may packaged in TO-251-3L type and the typical equivalent product is 1N70.
The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.