3VD210500YH is a 500V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology;
Advanced termination scheme to provide enhanced voltage-blocking capability;
Avalanche Energy Specified;
Intrinsic fast-recovery body diode;
The chip can be packaged in TO-251 type and the typical equivalent product is 3N50;
The packaged product is widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.