3VD359650RYH is a 650V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology;
Advanced termination scheme to provide enhanced voltage-blocking capability;
Avalanche Energy Specified;
This chip can be packaged in TO-220 type and the typical equivalent product is 10N65;
The packaged products are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.