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3VD359650RYH
HIGH VOLTAGE MOSFET CHIPS

3VD359650RYH is a 650V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology;

Advanced termination scheme to provide enhanced voltage-blocking capability;

Avalanche Energy Specified;

This chip can be packaged in TO-220 type and the typical equivalent product is 10N65;

The packaged products are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.