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SVD3205T(F)(S)
Planar low voltage MOS power transistor

SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. 

It can be widely used in electronic ballast, low-power SWPS.


Main feature
  • 110A,55V,RDS(on)(typ.)=7.5mW@VGS=10V

  • Low gate charge 

  • Low Crss

  • Fast switching

  • Improved dv/dt capability  


Documents
title Types of Size (KB) date Download the latest English version
SVD3205T(F)(S) 0 1970-01-01 SVD3205T(F)(S) Datasheet_1.9