SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
It can be widely used in electronic ballast, low-power SWPS.
110A,55V,RDS(on)(typ.)=7.5mW@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
title | Types of | Size (KB) | date | Download the latest English version |
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SVD3205T(F)(S) | 0 | 1970-01-01 | SVD3205T(F)(S) Datasheet_1.9 |