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SVS65R085K(FJH)HD3
SUPER JUNCTION MOS POWER TRANSISTOR

SVS65R085K(FJH)HD3 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies.

Main feature
  • 35A,650V, RDS(on)(typ.)=75mΩ@VGS=10V

  • New revolutionary high voltage technology

  • Ultra low gate charge

  • Periodic avalanche rated

  • Extreme dv/dt rated

  • High peak current capability

  • 100% avalanche tested

  • Pb-free lead plating

  • RoHS compliant

Documents
title Types of Size (KB) date Download the latest English version
SVS65R085K(FJH)HD3 0 1970-01-01 SVS65R085K(FJH)HD3 Datasheet_1.1