SVT035R5NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode.
This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.
21A, 30V, RDS(on)(typ.)=4.0mW@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
title | Types of | Size (KB) | date | Download the latest English version |
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SVT035R5NSA | 0 | 1970-01-01 | SVT035R5NSA Datasheet _1.0 |