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SVT035R5NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS   technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode.

This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.


Main feature
  • 21A, 30V, RDS(on)(typ.)=4.0mW@VGS=10V

  • Low gate charge

  • Low Crss

  • Fast switching

  • Improved dv/dt capability


Documents
title Types of Size (KB) date Download the latest English version
SVT035R5NSA 0 1970-01-01 SVT035R5NSA Datasheet _1.0