SVG066R5NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.
This device is widely used in UPS and Power Management for Inverter Systems.
16.5A, 60V, RDS(on)(typ.)=5.2mW@VGS=10V
Low gate charge
Low Crss
Fast switching
Extreme dv/dt rated
title | Types of | Size (KB) | date | Download the latest English version |
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SVG066R5NSA | 0 | 1970-01-01 | SVG066R5NSA Datasheet _1.0 |