The SGT40U120FDR1P7 field stop IGBT adopts Silan Trench Gate Field Stop IV+ technology, features low conduction loss and switching loss, positive temperature coefficient for easy parallel operation. This device is applicable to industrial welding, UPS, SMPS, and photovoltaic fields.
40A,1200V,VCE(sat)(typ.)=2.2V@IC=40A
Ultra low conduction loss
Fast switching
High breakdown voltage
title | Types of | Size (KB) | date | Download the latest English version |
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SGT40U120FDR1P7 | 0 | 1970-01-01 | SGT40U120FDR1P7 Datasheet_1.1 |