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The SGT40U120FDR1P7 field stop IGBT adopts Silan Trench Gate Field Stop IV+ technology, features low conduction loss and switching loss, positive temperature coefficient for easy parallel operation. This device is applicable to industrial welding, UPS, SMPS, and photovoltaic fields.

Main feature
  • 40A,1200V,VCE(sat)(typ.)=2.2V@IC=40A

  • Ultra low conduction loss

  • Fast switching

  • High breakdown voltage



Documents
title Types of Size (KB) date Download the latest English version
SGT40U120FDR1P7 0 1970-01-01 SGT40U120FDR1P7 Datasheet_1.1
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