The SGT51V65FD1P7 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields.
51A,650V,VCE(sat)(typ.)=1.65V@IC=51A
Ultra low conduction loss
Fast switching
High breakdown voltage
title | Types of | Size (KB) | date | Download the latest English version |
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SGT51V65FD1P7 | 0 | 1970-01-01 | SGT51V65FD1P7 Datasheet_1.0 |