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The SGT51V65FD1P7 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields.

Main feature
  • 51A,650V,VCE(sat)(typ.)=1.65V@IC=51A

  • Ultra low conduction loss

  • Fast switching

  • High breakdown voltage


Documents
title Types of Size (KB) date Download the latest English version
SGT51V65FD1P7 0 1970-01-01 SGT51V65FD1P7 Datasheet_1.0
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