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SVGP157R2NS   is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is widely used in UPS and Power Management for Inverter Systems.


Main feature
  • 100A, 150V, RDS(on)(typ.)=6.2mW@VGS=10V

  • Low gate charge

  • Low Crss

  • Fast switching

  • Improved dv/dt capability



Documents
title Types of Size (KB) date Download the latest English version
SVGP157R2NS 0 1970-01-01 SVGP157R2NS Datasheet_1.0
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