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SVT08110ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is widely used in UPS and Power Management for Inverter Systems.

Main feature
  • 90A, 80V, RDS(on)(typ.)=9.0mW@VGS=10V

  • Low gate charge

  • Low Crss

  • Fast switching

  • Extreme dv/dt rated



Documents
title Types of Size (KB) date Download the latest English version
SVT08110ND 0 1970-01-01 SVT08110ND Datasheet _1.0
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