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SVT034R1NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is widely used in power management for UPS and Inverter Systems.


Main feature
  • 90A, 30V, RDS(on)(typ.)=3.0mW@VGS=10V

  • Low gate charge

  • Low Crss

  • Fast switching

  • Improved dv/dt capability

  • 100% avalanche tested

  • Pb-free lead plating

  • RoHS compliant


Documents
title Types of Size (KB) date Download the latest English version
SVT034R1NL5 0 1970-01-01 SVT034R1NL5 Datasheet _1.0