Mailbox verification
Your email:
Verification Code:

SVG036R3NL3 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is widely used in UPS and Power Management for Inverter Systems.

Main feature
  • 24A, 30V, RDS(on)(typ.)=4.9mW@VGS=10V

  • Low gate charge

  • Low Crss

  • Fast switching

  • Improved dv/dt capability

  • 100% avalanche tested

  • Pb-free lead plating

  • RoHS compliant

Documents
title Types of Size (KB) date Download the latest English version
SVG036R3NL3 0 1970-01-01 SVG036R3NL3 Datasheet_1.0