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SVFP7N65CD(MJ)  is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. 

These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.

Main feature
  • 7A,650V,RDS(on)(typ.)=1.1W@VGS=10V

  • Low gate charge 

  • Low Crss

  • Fast switching

  • Extreme dv/dt rated

Documents
title Types of Size (KB) date Download the latest English version
SVFP7N65CD(MJ) 0 1970-01-01 SVFP7N65CD(MJ) Datasheet_1.4