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The SGT25U120FD1P7 field stop IGBT adopts Silan Trench Gate Field Stop IV+ technology, features low conduction loss and switching loss. This device is applicable to UPS, SMPS, and PFC fields.

Main feature
  • 25A, 1200V, VCE(sat)(typ.)=2.2V@IC=25A

  • Low conduction loss

  • Ultra-fast switching

  • High input impedance

Documents
title Types of Size (KB) date Download the latest English version
SGT25U120FD1P7 0 1970-01-01 SGT25U120FD1P7 Datasheet_1.1
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