SGT22T135QR1P7 inverse IGBT employs Silan new Reverse Conducting technology, features low conduction loss, low switching loss, high breakdown voltage, internal Freewheeling diode, positive/negative temperature coefficient. It is suitable for Induction heating field.
20A, 1350V, VCE(sat)(typ.)=1.8V@IC=20A
Low conduction loss
Internal freewheeling diode
High breakdown voltage
| title | Types of | Size (KB) | date | Download the latest English version |
|---|---|---|---|---|
| SGT22T135QR1P7 | 0 | 2023-05-03 | SGT22T135QR1P7 Datasheet_1.1 |