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      SGM820PB8B3TFM_T2 is a six-cell topology module based on Silan self-developed high-density trench process IGBT chip technology. This module is suitable for hybrid and pure electric vehicle applications, it features high current density, high short-circuit capability and high blocking voltage level, it provides more reliable guarantee for inverter operation under harsh environmental conditions.

Main feature
  • Based on fine trench FS5++ technology, blocking voltage up to 750V

  • Low VCE(sat) with positive temperature coefficient

  • Low switching loss

  • Low Qg and Cres

  • Using DBC with excellent thermal conductivity

  • Built-in NTC for each phase

  • Direct water-cooled substrate, low thermal resistance


Ordering Information
Product Name Package form Marking Hazardous Substance Control Packing Type Remarks
SGM820PB8B3TFM_T2 B3 SGM820PB8B3TFM_T2 / Carton
Block Diagram

SGM820PB8B3TFM_T2  中英文同.png

Documents
title Types of Size (KB) date Download the latest English version
SGM820PB8B3TFM_T2 0 2026-03-30 SGM820PB8B3TFM_T2 Brief Datasheet