SGM800PB8B3HTFM_ST2 is a six-cell topology module based on Silan self-developed high-density trench process IGBT chip technology. This module is suitable for hybrid and pure electric vehicle applications, it features high current density, high short-circuit capability and high blocking voltage level, it provides more reliable guarantee for inverter operation under harsh environmental conditions.
800A/750V, VCEsat(typ.) =1.613V@IC=800A
Based on fine trench FS-V++ technology, blocking voltage up to 750V
Low VCE(sat) with positive temperature coefficient
Low switching losses
Low Qg and Cres
Using DBC with excellent thermal conductivity
Built-in NTC for each phase
Direct water-cooled substrate, low thermal resistance
| Product Name | Package form | Marking | Hazardous Substance Control | Packing Type | Remarks |
|---|---|---|---|---|---|
| SGM800PB8B3HTFM_ST2 | B3H | SGM800PB8B3HTFM_ST2 | / | Carton |

| title | Types of | Size (KB) | date | Download the latest English version |
|---|---|---|---|---|
| SGM800PB8B3HTFM_ST2 | 0 | 2026-03-31 | SGM800PB8B3HTFM_ST2 Brief Datasheet |