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      SGM540PB8B3HTFM_LN is a six-cell topology module based on Silan self-developed high-density trench process IGBT chip technology. This module is suitable for hybrid and pure electric vehicle applications, it features high current density, high short-circuit capability and high blocking voltage level, it provides more reliable guarantee for inverter operation under harsh environmental conditions.


Main feature
  • Based on fine trench FS-V technology, blocking voltage up to 750V

  • Low VCE(sat) with positive temperature coefficient

  • Low switching loss

  • Low Qg and Cres

  • Using DBC with excellent thermal conductivity

  • Built-in NTC for each phase

  • Direct water-cooled substrate, low thermal resistance


Ordering Information
Product Name Package form Marking Hazardous Substance Control Packing Type Remarks
SGM540PB8B3HTFM_LN B3H SGM540PB8B3HTFM_LN / Carton
Block Diagram

SGM540PB8B3HTFM_LN.png

Documents
title Types of Size (KB) date Download the latest English version
SGM540PB8B3HTFM_LN 0 2026-05-14 SGM540PB8B3HTFM_LN Brief Datasheet