STS65R580D(F)(S)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies.
8A,650V,RDS(on)(typ.)=0.25W@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
100% avalanche tested
Pb-free lead plating
RoHS compliant
title | Types of | Size (KB) | date | Download the latest English version |
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STS65R580D(F)(S)S2 | 0 | 1970-01-01 | STS65R580D(F)(S)S2 Datasheet_1.1 |