SVG069R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.
This device is widely used in Secondary synchronous rectifier, Power Management for Inverter Systems.
60A, 60V, RDS(on)(typ.)=8mW@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
title | Types of | Size (KB) | date | Download the latest English version |
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SVG069R5ND(MJ)(T) | 0 | 1970-01-01 | SVG069R5ND(MJ)(T) Datasheet_1.2 |