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SVG069R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is widely used in Secondary synchronous rectifier, Power Management for Inverter Systems.


Main feature
  • 60A, 60V, RDS(on)(typ.)=8mW@VGS=10V

  • Low gate charge

  • Low Crss

  • Fast switching

  • Improved dv/dt capability

Documents
title Types of Size (KB) date Download the latest English version
SVG069R5ND(MJ)(T) 0 1970-01-01 SVG069R5ND(MJ)(T) Datasheet_1.2