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SVFP18N60FJ
Planar high voltage MOS power transistor

SVFP18N60FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.


Main feature
  • 18A,600V,RDS(on)(typ.)=0.36W@VGS=10V

  • Low gate charge 

  • Low Crss

  • Fast switching

  • Improved dv/dt capability


Documents
title Types of Size (KB) date Download the latest English version
SVFP18N60FJ 0 1970-01-01 SVFP18N60FJ_Datasheet_1.0
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