SVFP18N50FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved cell and guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
18A,500V,RDS(on)(typ.)=0.26W@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
title | Types of | Size (KB) | date | Download the latest English version |
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SVFP18N50FJ | 0 | 1970-01-01 | SVFP18N50FJ Datasheet_1.0 |