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SVG076R5NT(S)(D)(KL)  is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS   technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.



Main feature
  • 100A, 70V, RDS(on)(typ.)=5.4mW@VGS=10V

  • Low gate charge

  • Low Crss

  • Fast switching

  • Improved dv/dt capability

Documents
title Types of Size (KB) date Download the latest English version
SVG076R5NT(S)(D)(KL) 0 1970-01-01 SVG076R5NT(S)(D)(KL) Datasheet_1.2