SVG076R5NT(S)(D)(KL) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.
This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.
100A, 70V, RDS(on)(typ.)=5.4mW@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
title | Types of | Size (KB) | date | Download the latest English version |
---|---|---|---|---|
SVG076R5NT(S)(D)(KL) | 0 | 1970-01-01 | SVG076R5NT(S)(D)(KL) Datasheet_1.2 |