SVG086R0NT(S)(D)(L5) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.
This device is widely used in UPS, Power Management for Inverter Systems.
120A, 80V, RDS(on)(typ.)=5.0mW@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
| title | Types of | Size (KB) | date | Download the latest English version |
|---|---|---|---|---|
| SVG086R0NT(S)(D)(L5) | 0 | 2020-04-08 | SVG086R0NT(S)(D)(L5) Datasheet_1.4 |