Mailbox verification
Your email:
Verification Code:

SVG10120NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is widely used in power management for UPS and Inverter Systems.


Main feature
  • 16A, 100V, RDS(on)(typ.)=10mW@VGS=10V

  • Low gate charge

  • Low Crss

  • Fast switching

  • Improved dv/dt capability


Documents
title Types of Size (KB) date Download the latest English version
SVG10120NSA 0 1970-01-01 SVG10120NSA Datasheet_1.0