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The SVG10180NT/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS   technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

These devices are widely used in UPS, DC-DC converters, synchronous rectifier and switch.


Main feature
  • 45A, 100V, RDS(on)(typ.)=15.5mW@VGS=10V

  • Low gate charge

  • Low Crss

  • Fast switching

  • Improved dv/dt capability

Documents
title Types of Size (KB) date Download the latest English version
SVG10180NT/D 0 2020-04-09 SVG10180NT(D) Datasheet_1.0